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Ion beam modification of strained InGaAs/InP characterized by HRXRD, PL and AFM |
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| Authors: | G. Devaraju A.P. Pathak G. Sai Saravanan M. Wojcik S.A. Khan B.M. Arora |
| Affiliation: | a School of Physics, University of Hyderabad, Central University (P.O.), Hyderabad 500 046, India b Gallium Arsenide Enabling Technology Centre, Vignyanakancha (P.O.), Hyderabad 500 069, India c Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133, Poland d Soltan Institute for Nuclear Studies, Swierk/Otwock, Warsaw, Poland e Inter University Accelerator Centre, P.O. Box 10502, Aruna Asaf Ali Marg, New Delhi 110 067, India f Tata Institute of Fundamental Research, Homibhabha Road, Colaba, Mumbai 400 005, India |
| Abstract: | Highly tensile strained InGaAs/InP multi quantum wells have been grown by the LP-MOVPE technique. Such samples were subjected to irradiation with 100 MeV Au8+ ions. These were studied as a function of fluence, then the irradiated samples were annealed by rapid thermal annealing at 700 °C for 60 s in nitrogen atmosphere. We used high resolution X-ray diffraction (HRXRD), photoluminescence (PL) and atomic force microscopy (AFM) characterization techniques to study the interfacial induced changes, band gap modifications and surface morphology. Multi quantum wells were then studied before and after irradiation. |
| Keywords: | 68.65.&minus k 61.72.Dd 68.37.Ps 78.55.&minus m 61.80.Jh |
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