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多孔硅(PS)制备新方法
引用本文:杨国伟.多孔硅(PS)制备新方法[J].半导体光电,1993,14(4):337-339.
作者姓名:杨国伟
作者单位:航空航天部第014中心 硕士,洛阳 471009
摘    要:介绍了两种制备多孔硅的方法:电火花刻蚀法和激光辐射腐蚀法。讨论了这两种新方法制备的多孔硅样品的结构和发光特性,同时,与电化学法制备的多孔硅的结构和发光特性进行了比较。最后指出这两种新方法对于多孔硅形成机理和发光机制研究是有所帮助的。

关 键 词:多孔硅  电火花  激光  光致发光  制备

New Methods for Porous Silicon Preparation
Yang Guowei No. Center,under the Ministry of Aviation and Astronautics,Luoyang.New Methods for Porous Silicon Preparation[J].Semiconductor Optoelectronics,1993,14(4):337-339.
Authors:Yang Guowei No Center  under the Ministry of Aviation and Astronautics  Luoyang
Affiliation:Yang Guowei No. 014 Center,under the Ministry of Aviation and Astronautics,Luoyang 471009
Abstract:Two new methods for porous silicon preparation i. e. spark erosion and laser irradiation erosion are reviewed in this paper. The structure and photolu- minescence of porous silicon prepared by these two new methods are discussed. It is proposed that the new methods are help, ful to the research on mechanism of porous silicon formation and photoluminescence.
Keywords:Porous Silicon  Spark  Laser  Photoluminescence
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