GaSb and InAs: New Materials for Metal-Semiconductor Point-Contact Diodes |
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| Authors: | G. Carelli A. De Michele M. Finotti K. Bousbahi N. Ioli A. Moretti |
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| Affiliation: | 1. Dipartimento di Fisica and, INFM, via Buonarroti 2, 56127 -, Pisa, Italia
2. Dipartimento di Fisica and INFM, IPCF-CNR, Italia
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| Abstract: | Metal-semiconductor point contact diodes have proved to be good detectors and mixers for radiation from the far-infrared to visible. Until now GaAs, InSb and InP are the most studied and used semiconductor materials for these devices. In this work we present the performance in the visible and infrared region for metal-semiconductor point-contact diodes with GaSb or InAs as the semiconductor layers. These two new materials have shown good characteristics. |
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