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Anomalous Hall Effect in Sn1−x−y Mn x Eu y Te and Sn1−x−y Mn x Er y Te Mixed Crystals
Authors:K. Racka  I. Kuryliszyn  M. Arciszewska  W. Dobrowolski  J.-M. Broto  O. Portugall  H. Rakoto  B. Raquet  V. Dugaev  E. I. Slynko  V. E. Slynko
Affiliation:1. Institute of Physics, Polish Academy of Sciences, Warszawa, Poland
2. Laboratoire National des Champs Magnetiques Pulses, Toulouse, France
3. Chernivtsy Department of the Institute of Materials Science Problems, Ukraine
Abstract:
The Anomalous Hall Effect (AHE) was investigated in IV–VI ferromagnetic semimagnetic semiconductors of Sn1?x Mn x Te codoped with either Eu or Er. The analysis of experimental data is as follows. Hall resistivity and magnetization showed that AHE coefficient R s depends on temperature and its value decreases with thetemperature increase. We observe that above ferromagnet–paramagnet transition temperature R s changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of R s , particularly change of the sign.
Keywords:
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