Compositional dependence of thermal stability of refractory metal silicide schottky contacts to GaAs |
| |
| Authors: | C. P. Lee T. H. Liu S. C. Wu |
| |
| Affiliation: | (1) Semiconductor Research Center, National Chiao Tung University, Hsin Chu, Taiwan, Republic of China;(2) Department of Physics, National Tsing Hwa University, Hsin Chu, Taiwan, Republic of China |
| |
| Abstract: | ![]()
Thermal stability of refractory metal silicide Schottky contacts, WSix, TaSix and MoSix withx = 0.6 andx = 2, to GaAs have been studied. It was found that the outdiffusion of Ga and As through the silicide films depends on the silicide composition, with much higher diffusion rate in films withx = 2 than in films withx = 0.6 and, therefore, contributes to the degradation of the Schottky barriers after high temperature anneal-ing. |
| |
| Keywords: | Schottky barrier GaAs refractory metal |
| 本文献已被 SpringerLink 等数据库收录！ |
|
