Formation of a Zinc Oxide/Yttria-Stabilized Zirconia Interface |
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| Authors: | Susan C. Schneider Martin A. Seitz Apurba Choudhury |
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| Affiliation: | Department of Electrical Engineering and Computer Science, Marquette University, Milwaukee, Wisconsin 53233 |
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| Abstract: | Zinc oxide was deposited on the (111) face of an yttria-stabilized zirconia single crystal using the chemical vapor phase method. Zinc vapor was obtained by reducing polycrystalline ZnO in hydrogen at 1200°C. The deposition of the ZnO was accomplished by the reoxidation of zinc vapor at temperatures of 1300° to 1345°C. |
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