Minority carrier traps in epitaxial gallium arsenide phosphide |
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| Authors: | I D Henning H Thomas |
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| Affiliation: | (1) Dept. of Physics, Electronics and Electrical Engineering, University of Wales Institute of Science and Technology, Cardiff, UK |
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| Abstract: | The optical injection of minority carriers in the depletion region of a reverse biased Schottky barrier has permitted the
study of deep levels in vapour phase epitaxial n-type GaAsP (Te) structures. The deep level transient spectroscopy (DLTS)
experiments have yielded two hole traps at (Ev + 0.60)eV and (Ev + O.36)eV. Additional subsidiary transient capacitance, photocurrent and capture experiments are analysed, the details of
which give electron and hole capture cross-sections, trap densities and activation energies. Derived values of minority carrier
lifetime (~1 ns) agree with experimental values and with injection-level dependent LED efficiency. |
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| Keywords: | DLTS transient capacitance deep level defects LED efficiency |
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