A base-band NDS electrode configuration for HACT devices |
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| Authors: | Carroll RD Merritt SW Branciforte EJ Tanski WJ Cullen DE Sacks RN |
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| Affiliation: | United Technol. Res. Center, East Hartford, CT ; |
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| Abstract: | Heterostructure Acoustic Charge Transport (HACT) devices have been fabricated with a new nondestructive sense (NDS) electrode structure that provides for the recovery of base-band signals without the use of an integrating capacitor. This electrode structure provides an output signal comprising an RF carrier at the SAW frequency, amplitude modulated by the sampled input signal which has been delayed by a period proportional to the output electrodes distance from the input diode. The output of the NDS electrode structure is subsequently demodulated to provide the base-band signal |
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