| 离子束辅助沉积合成B—N薄膜的分析 |
| |
| 引用本文： | 江海,陶琨,李恒德.离子束辅助沉积合成B—N薄膜的分析[J].金属学报,1993,29(4):77-80. |
| |
| 作者姓名： | 江海 陶琨 李恒德 |
| |
| 作者单位： | 清华大学材料科学与工程系，清华大学，清华大学 讲师，北京 100084 |
| |
| 摘 要： | 用离子束辅助沉积(IBAD)技术合成氮化硼薄膜,红外吸收谱和透射电镜的观测结果显示,薄膜含有c—BN和h—BN相薄膜Knoop硬度值高达35GPa。逐层剥离的AES谱结果表明,薄膜表面存在氮离子的注入效应,薄膜由注入层、成分均匀层和离子束混合过渡层组成
|
| 关 键 词： | 氮化硼 薄膜 IBAD |
| 收稿时间： | 1993-04-18 |
| 修稿时间： | 1993-04-18 |
PREPARATION OF B-N FILMS BY ION BEAM ASSISTED DEPOSITION |
| |
| JIANG Hai,TAO Kun,LI Hengde Tsinghua University.PREPARATION OF B-N FILMS BY ION BEAM ASSISTED DEPOSITION[J].Acta Metallurgica Sinica,1993,29(4):77-80. |
| |
| Authors: | JIANG Hai TAO Kun LI Hengde Tsinghua University |
| |
| Affiliation: | JIANG Hai,TAO Kun,LI Hengde Tsinghua University. Beijing lecturer,Department of Materials Science and Engineering,Tsinghua University,Beijing |
| |
| Abstract: | BN films, synthesized by ion beam assisted deposition, were analysed by RBS,AES, IR spectra and TEM. Formation of c-BN phase was shown not only by IR spectra atabsorption peak of 1100 cm~(-1), but also by electron diffraction pattern. The results of AESdemonstrate an effect of N~+ implantation near the film surface. The deposited films consist ofthree layers, i.e., ion implantation layer, film layer and mixed intermediate layer, according tothe difference of concentration. The micro-Knoop hardess of the film is 25-35 GPa. |
| |
| Keywords: | ion beam assisted deposition BN film |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《金属学报》浏览原始摘要信息 |
|
点击此处可从《金属学报》下载全文 |
|
