| MOSFET的热载流子损伤及其退火 |
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| 引用本文： | 余学峰,艾尔肯,任迪远,张国强,陆妩,郭旗. MOSFET的热载流子损伤及其退火[J]. 固体电子学研究与进展, 2006, 26(4): 560-563 |
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| 作者姓名： | 余学峰 艾尔肯 任迪远 张国强 陆妩 郭旗 |
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| 作者单位： | 中科院新疆理化技术研究所,乌鲁木齐,830011;中科院新疆理化技术研究所,乌鲁木齐,830011;中科院新疆理化技术研究所,乌鲁木齐,830011;中科院新疆理化技术研究所,乌鲁木齐,830011;中科院新疆理化技术研究所,乌鲁木齐,830011;中科院新疆理化技术研究所,乌鲁木齐,830011 |
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| 摘 要： | 对国内常规54HC工艺制作的PMOSFET进行了F-N热载流子注入损伤实验,研究了MOSFET跨导、阈电压等参数随热载流子注入的退化规律,特别是从微观氧化物电荷和界面态变化对阈电压影响角度,对国内外较少见报道的MOSFET热载流子损伤在室温和高温(100°C)下的退火特性进行了研究,并从该角度探讨了MOSFET热载流子注入产生氧化物电荷和界面态的特性。
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| 关 键 词： | 金属氧化物半导体场效应晶体管 热载流子 损伤 退火 |
| 文章编号： | 1000-3819（2006）04-560-04 |
| 收稿时间： | 2005-01-11 |
| 修稿时间： | 2005-04-04 |
MOSFET's Damage Induced by Hot Carrier Injection and Its Annealing |
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| YU Xuefeng,Erken,REN Diyuan,ZHANG Guoqiang,LU Wu,GUO Qi. MOSFET's Damage Induced by Hot Carrier Injection and Its Annealing[J]. Research & Progress of Solid State Electronics, 2006, 26(4): 560-563 |
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| Authors: | YU Xuefeng Erken REN Diyuan ZHANG Guoqiang LU Wu GUO Qi |
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| Affiliation: | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, 830011, CHN |
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| Abstract: | Responses of MOSFET′s transconductance and threshold voltage to the hot-carrier injection have been studied. The annealing characteristics of hot-carrier injecting induced damage also has been investigated, and from this view, the generation of the oxide charges and interface states have been discussed. |
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| Keywords: | MOSFET hot-carrier damage annealing |
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