ZnO Grown on (111) ZnS Substrates by Plasma-Assisted Molecular Beam Epitaxy |
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Authors: | Kuaile Zhao Shaoping Wang A. Shen |
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Affiliation: | 1. Department of Electrical Engineering, City College of New York, New York, NY, 10031, USA 2. Fairfield Crystal Technology, New Milford, CT, 06776, USA
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Abstract: | ZnO thin films have been grown by plasma-assisted molecular beam epitaxy on (111) ZnS substrates. The films grown on Zn-face substrates showed better structural and optical properties compared with those grown on S-face substrates, as demonstrated by x-ray diffraction and photoluminescence measurements. Scanning electron microscopy measurements indicated that ZnO films grown on Zn-face substrates also have smoother surface morphology. It is also found that higher growth temperature yields films with better quality. |
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