Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC |
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| Authors: | SIDDARTH G. SUNDARESAN MULPURI V. RAO YONGLAI TIAN JOHN A. SCHREIFELS MARK C. WOOD KENNETH A. JONES ALBERT V. DAVYDOV |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA;(2) LT Technologies, Fairfax, VA 22033, USA;(3) Department of Chemistry and␣Biochemistry, George Mason University, Fairfax, VA 22030, USA;(4) Sensors and Electron Devices Directorate, Army Research Laboratory, Adelphi, MD 20783, USA;(5) Metallurgy Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA |
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| Abstract: | Rapid solid-state microwave annealing was performed for the first time on N+-, Al+-, and B+-implanted SiC, and the results were compared with the conventional furnace annealing. For microwave annealing, temperatures up to 2,000 °C were attained with heating rates exceeding 600 °C/s. An 1,850 °C/35 s microwave anneal yielded a root-mean-square (RMS) surface roughness of 2 nm, which is lower than the 6 nm obtained for 1,500 °C/15 min conventional furnace annealing. For the Al implants, a minimum room-temperature sheet resistance (R s ) of 7 kΩ/□ was measured upon microwave annealing. For the microwave annealing, Rutherford backscattering (RBS) measurements indicated a better structural quality, and secondary-ion-mass-spectrometry (SIMS) boron implant depth profiles showed reduced boron redistribution compared to the corresponding results of the furnace annealing. |
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| Keywords: | Implantation solid-state microwave annealing silicon carbide |
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