Towards All Electrical Spin Injection and Detection in GaAs in a Lateral Geometry

Herein we discuss our approach to realizing all electrical spin injection and detection in GaAs. We propose a lateral geometry, with two ferromagnetic electrodes crossing an n-doped GaAs channel. AlO _x tunnel barriers are to be used in order to overcome the impedance mismatch and different widths of the two electrodes ensure different coercive fields. We present a detailed theoretical analysis of the expected magnetoresistance. Differences in behavior between lateral and vertical devices, the influence of the applied bias (electric field), and opportunities offered by different measurement geometries were explored. The MBE grown wafer consisted of 100 nm Al_0.3Ga_0.7As, acting as confinement layer, 100 nm n-doped (4 × l0¹⁷ cm⁻³) GaAs, 3 nm n⁺⁺ GaAs (10²¹ cm⁻³), to suppress Schottky barrier formation, and 1.5 nm Al. The Al was oxidized naturally in order to obtain tunnel barriers. By making use of in-situ shadow masks, a 0.1 mm wide channel is defined by covering the rest of the sample by insulating SiO₂, followed by deposition of Ta bonding pads. Finally, 500 and 1000 nm wide CoFe electrodes crossing the GaAs channel are obtained by e-beam lithography and sputtering. We show that the I–V characteristics of the CoFe/AlO _x /GaAs interface are consistent with tunneling as the main injection mechanism. However, the resistance-area (5 × 10⁹ Ω μm²) of our barriers is too high compared to the GaAs conductance (50 Ω square resistance) leading to a strong suppression of magnetoresistance. Further experiments are in progress toward optimizing barrier and channel impedance matching.