Visible photoluminescence of zinc oxide films electrochemically deposited on silicon substrates |
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Authors: | Chubenko E. B. Bondarenko V. P. Balucani M. |
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Affiliation: | (1) State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, 310027, People’s Republic of China; |
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Abstract: | ![]() Continuous crystalline films of zinc oxide (ZnO) with thicknesses of 6–10 μm were obtained by electrochemical deposition from aqueous zinc nitrate solutions on silicon substrates with a buffer nickel layer. X-ray diffraction measurements showed that the polycrystalline films possess a hexagonal crystal lattice with predominant (0002) orientation. The obtained ZnO films exhibit strong photoluminescence in the visible spectral range at room temperature. |
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