Optimizing efficiency of polycrystalline p-Si anode organic light-emitting diode |
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Authors: | Jian-Xing Luo Wei Wang Hu Meng Wan-Jin Xu Guo-Gang Qin |
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Affiliation: | 1.State Key Laboratory for Mesoscopic Physics, School of Physics,Peking University,Beijing,China;2.Key Laboratory of Semiconductor Materials,Chinese Academy of Science,Beijing,China |
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Abstract: | Optimizing efficiencies of organic light-emitting diodes (OLEDs) with a structure of Al/glass/nanometer-thick polycrystalline p-Si (NPPS) anode/SiO2/N′-bis-(1-naphthl)-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/tris (8-hydroxyquinoline) aluminum (Alq3)/4,7-diphenyl-1,10-phenanthroline (BPhen):Cs2CO3/Sm/Au were studied. The NPPS anodes were fabricated by magnetron sputtering (MS) Si and Ni layers followed by Ni-induced crystallization of the amorphous Si layers. By adjusting the resistivity of the p-Si target adopted in MS, the electroluminescent efficiency of the OLED was optimized. When the resistivity of the p-Si target is 0.01 Ω·cm, the current and power efficiencies of the NPPS anode OLED reach maximum values of 6.7 cd·A?1 and 4.64 lm·W?1, respectively, which are 2.7 and 3.1 times those of the resistivity-optimized bulk p-Si anode counterpart and 2.9 and 3.7 times those of the indium tin oxide (ITO) anode counterpart, and then, the physical reasons were discussed. |
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