The influence of dependence of HEMT’s model parameters on gate and drain voltages on upper boundary of LNA’s linearity

On the basis of numerical model the parameters of high electron mobility transistors (HEMT’s) as a function of gate and drain voltages are obtained. The simulation of nonlinear properties of low noise amplifier cascade with HEMT for various modes of its operation has shown that the account of its dependence simultaneously on both the voltages allows to approach the results of calculation to experimental data.