| 一种SiC高温温度传感器 |
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| 引用本文： | 胡林辉,谢家纯,徐军,王颖,易波. 一种SiC高温温度传感器[J]. 传感器与微系统, 2003, 22(12): 32-33,39 |
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| 作者姓名： | 胡林辉 谢家纯 徐军 王颖 易波 |
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| 作者单位： | 中国科技大学,物理系,安徽,合肥,230026 |
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| 基金项目： | 国家自然科学基金资助项目(50132040)，中国科学院创新项目(KJCX2-SW-04) |
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| 摘 要： | 理论表明,当流过SiC肖特基势垒二极管的正向电流恒定时,在一定温度范围内,器件两端的正向压降与温度变化之间存在线性关系。利用此特性,可以制造SiC高温温度传感器。阐述了SiC高温温度传感器的工作原理、结构特点和工艺过程,介绍了传感器系统的结构。系统的测温范围在0～500℃,测量准确度可达0.5℃。
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| 关 键 词： | 温度传感器 宽带隙 碳化硅 高温 |
| 文章编号： | 1000-9787(2003)12-0032-02 |
A high temperature sensor based on SiC |
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| HU Lin-hui,XIE Jia-chun,XU Jun,WANG Ying,YI Bo. A high temperature sensor based on SiC[J]. Transducer and Microsystem Technology, 2003, 22(12): 32-33,39 |
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| Authors: | HU Lin-hui XIE Jia-chun XU Jun WANG Ying YI Bo |
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| Abstract: | Theories show,when the forward current through the SiC Schottky barrier diode is constant,in a wide temperature range the forward voltage drop of the device has a linear function with the temperature change.According to this feature,SiC high temperature sensor can be made.Then the working principles,structure and the technology process of this kind of sensor and its system are introduced.This sensor system operates over a temperature range from 0～500℃,and its measurement accuracy can reach 0.5℃. |
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| Keywords: | temperature sensor wide band gap SiC high temperature |
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