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烧结温度对放电等离子烧结法制备IGZO靶材 的影响研究
引用本文:苏文俊,陈坚,袁振宇,袁铁锤,肖松文.烧结温度对放电等离子烧结法制备IGZO靶材 的影响研究[J].矿冶工程,2016,36(1):114-116.
作者姓名:苏文俊  陈坚  袁振宇  袁铁锤  肖松文
作者单位:1.中南大学 粉末冶金研究院, 湖南 长沙 410083; 2.长沙矿冶研究院有限责任公司, 湖南 长沙 410012
摘    要:以预烧结复合粉体为原料, 采用放电等离子烧结(SPS)方法制备IGZO靶材, 并采用密度测定、XRD、SEM等手段对不同烧结温度条件下的靶材结构性能进行了表征分析。结果表明, 在一定的烧结温度区间, 随烧结温度升高, 烧结体相对密度增加, 体积电阻率降低, 烧结温度1 100 ℃条件下烧结体的结构性能较好, 相对密度97.44%, 体积电阻率3.66 mΩ/cm3

关 键 词:IGZO靶材  放电等离子烧结法  烧结温度  
收稿时间:2015-09-21

Effects of Sintering Temperature on IGZO Targets Prepared by Spark Plasma Sintering
SU Wen-jun,CHEN Jian,YUAN Zhen-yu,YUAN Tie-chui,XIAO Song-wen.Effects of Sintering Temperature on IGZO Targets Prepared by Spark Plasma Sintering[J].Mining and Metallurgical Engineering,2016,36(1):114-116.
Authors:SU Wen-jun  CHEN Jian  YUAN Zhen-yu  YUAN Tie-chui  XIAO Song-wen
Affiliation:1.Research Institute of Powder Metallurgy, Central South University, Changsha 410083, Hunan, China; 2. Changsha Research Institute of Mining & Metallurgy Co Ltd, Changsha 410012, Hunan, China
Abstract:IGZO targets were prepared by spark plasma sintering from presintered InGaZnO4 powder. The microstructure and performance of the targets prepared at different temperatures were characterized and analyzed using density measurement, XRD and SEM. The results showed that at a right temperature range, with the sintering temperature rising, the relative density of IGZO targets increased, which resulted in the volume resistivity reduced. The sintered product displayed a super microstructure at the sintering temperature of 1 100 ℃, with a relative density of 97.44% and volume resistivity of 3.66 mΩ/cm3.
Keywords:IGZO target  spark plasma sintering  sintering temperature
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