Electroluminescence of graded-gap structures with blocking and ohmic contacts |
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Authors: | B. S. Sokolovskii V. I. Ivanov-Omskii G. A. Il’chuk |
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Affiliation: | (1) Franko National University, Lviv, 79602, Ukraine;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(3) Lviv National Polytechnical University, Lviv, 79013, Ukraine |
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Abstract: | ![]() Special features of the electroluminescence of uniformly doped graded-gap structures with blocking and ohmic contacts are studied theoretically. Analytical expressions for the spectral and integrated electroluminescence intensities are derived and analyzed in the case of a constant gradient of the band gap and a strong absorption of light. It is shown that the presence of the blocking contact on the wide-gap face of the graded-gap structure leads to an increase in the efficiency of the negative and, especially, positive electroluminescence compared to the case of a graded-gap structure with two ohmic contacts. The recombination radiation of a graded-gap structure with the blocking contact at the narrow-gap face features in the majority of cases a sign-alternating spectral dependence; a broad band of negative electroluminescence is prevalent in this dependence in the region of high currents. absorption. |
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