| MOCVD生长GaN薄膜的实时干涉曲线分析 |
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| 引用本文： | 李翠云,朱华.MOCVD生长GaN薄膜的实时干涉曲线分析[J].武汉理工大学学报,2005,27(11):18-21. |
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| 作者姓名： | 李翠云 朱华 |
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| 作者单位： | 南昌大学材料科学研究所,南昌,330047;景德镇陶瓷学院机电系,景德镇,333001 |
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| 基金项目： | 国家“863”计划纳米专项(2003AA302160) |
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| 摘 要： | 金属有机化学气相沉积（MOCVD）生长系统中通常用激光干涉曲线对材料生长进行实时监控.根据薄膜干涉原理,通过建立反射模型,对GaN薄膜的生长干涉曲线振幅的变化与其生长模式及表面粗糙度的关系进行了详细的阐述和分析.结果表明：干涉曲线中的振幅会随薄膜表面粗糙度的增大而衰减,其衰减程度与粗糙的变化快慢有关,根据材料的实时干涉曲线可揭示其在不同生长过程中的生长模式和定量分析样品表面粗糙度.
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| 关 键 词： | MOCVD 干涉曲线 反射率 粗糙度 |
| 文章编号： | 1671-4431(2005)11-0018-03 |
| 修稿时间： | 2005年6月17日 |
Curve Analysis of Real-time Interference in GaN Film Growth by MOCVD |
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| LI Cui-yun,ZHU Hua.Curve Analysis of Real-time Interference in GaN Film Growth by MOCVD[J].Journal of Wuhan University of Technology,2005,27(11):18-21. |
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| Authors: | LI Cui-yun ZHU Hua |
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| Affiliation: | LI Cui-yun~ |
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| Abstract: | Material growth is normally real-time monitored by using laser interference curve in the metal organic chemical vapor deposition(MOCVD) growth system.According to the thin film interference principle,detailed elaboration and analysis about the dependences of the oscillation amplitude change of GaN thin film growth interference curve on the thin film growth patterns and the surface roughness through establishing thin film reflection model were made.The result indicated that the variation of oscillation amplitude in thin film interference curve was related to its surface roughness,if the material even grow,the amplitude of interference curve is even and no change;if the material non-even grow and the surface was roughness,the amplitude of interference curve was weakened with increasing thin film surface roughness. |
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| Keywords: | MOCVD interference curve reflectance roughness |
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