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Ultra‐Flexible, “Invisible” Thin‐Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends
Authors:Xinge Yu  Li Zeng  Nanjia Zhou  Peijun Guo  Fengyuan Shi  Donald B. Buchholz  Q. Ma  Junsheng Yu  Vinayak P. Dravid  Robert P. H. Chang  Michael Bedzyk  Tobin J. Marks  Antonio Facchetti
Affiliation:1. Department of Chemistry, Northwestern University, Evanston, IL, USA;2. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, China;3. Applied Physics Program and the Materials Research Center, Northwestern University, Evanston, IL, USA;4. Department of Materials Science and Engineering, the Materials Research Center, Northwestern University, Evanston, IL, USA;5. Argonne National Lab, Lemont, IL, USA;6. Polyera Corporation, Skokie, IL, USA
Abstract:
Keywords:flexible materials  indium oxide  polymer blends  thin‐film transistors  transparent electronics
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