Dielectric enhancement of BaTiO3/BaSrTiO3/SrTiO3 multilayer thin films deposited on Pt/Ti/SiO2/Si substrates by sol–gel method |
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| Authors: | Ning Zhao Lixi Wan Liqiang Cao Daquan Yu Shuhui Yu Rong Sun |
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| Affiliation: | 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China;2. Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, PR China;1. Department of Materials Science, School of Natural Sciences, University of Patras, Patras 26504, Greece;2. Interdepartmental Program of Graduate Studies on “Polymer Science and Technology”, University of Patras, Patras 26504, Greece;3. Department of Physics, School of Natural Sciences, University of Patras, Patras 26504, Greece;1. Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan, 250061, China;2. Suzhou Institute of Shandong University, Suzhou, 215123, China;3. National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA;4. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China;1. Frontier Institute of Science and Technology, State Key Laboratory for Mechanical Behavior of Materials, Xi''an Jiaotong University, Xi''an, 710049, PR China;2. Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore |
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| Abstract: | Polycrystalline BaTiO3/Ba0.6Sr0.4TiO3/SrTiO3 (BT/BST/ST) multilayer thin films with different periodicities have been deposited on Pt/Ti/SiO2/Si substrates by using a sol–gel method. The multilayer thin films were crack free, compact and crystallized in a perovskite structure. The dielectric constant of the multilayer thin films was significantly increased and the dielectric loss was almost the same as those of uniform BT, ST and BST thin films. The dielectric constant increased with increasing stacking periodicity as the thickness of each individual layer decreased. The multilayer thin films showed excellent dielectric properties and can be promisingly used for the dielectric layer of silicon-based embedded capacitors in package substrate. |
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