| Ar气压强对直流脉冲磁控溅射制备Mo薄膜性能的影响 |
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| 引用本文： | 朱继国,丁万昱,王华林,张树旺,张粲,张俊计,柴卫平.Ar气压强对直流脉冲磁控溅射制备Mo薄膜性能的影响[J].微细加工技术,2008(4). |
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| 作者姓名： | 朱继国 丁万昱 王华林 张树旺 张粲 张俊计 柴卫平 |
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| 作者单位： | 大连交通大学,材料科学与工程学院,光电材料与器件研究所,辽宁大连,116028 |
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| 基金项目： | 大连交通大学人才引进启动基金 |
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| 摘 要： | 利用直流脉冲磁控溅射方法在玻璃衬底上制备太阳电池背接触Mo薄膜.通过台阶仪、四探针电阻仪、X射线衍射仪、紫外-可见分光光度计等研究了Ar气压强对薄膜结构及光电性能的影响,结果表明,在低的Ar气压强下制备的Mo薄膜晶粒尺寸较大,薄膜结晶质量好,薄膜具有优良的光电性能,Ar气压强的增加将导致薄膜的晶粒尺寸减小,薄膜结晶质量差,结构疏松,从而降低薄膜的光电性能.Ar气压强为0.4 Pa时制备薄膜的晶粒尺寸为21.02 nm,电阻率最低,为14μΩ·cm,波长190 nm-850 nm范围内的平均反射率可达到66.94%.
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| 关 键 词： | Mo薄膜 直流脉冲磁控溅射 晶粒尺寸 光电性能 |
Effects of Argon Pressure on Properties of Mo Films Prepared by Direct Current Pulse Magnetron Sputtering |
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| ZHU Ji-guo,DING Wan-yu,WANG Hua-lin,ZHANG Shu-wang,ZHANG Can,ZHANG Jun-ji,CHAI Wei-ping.Effects of Argon Pressure on Properties of Mo Films Prepared by Direct Current Pulse Magnetron Sputtering[J].Microfabrication Technology,2008(4). |
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| Authors: | ZHU Ji-guo DING Wan-yu WANG Hua-lin ZHANG Shu-wang ZHANG Can ZHANG Jun-ji CHAI Wei-ping |
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| Affiliation: | ZHU Ji-guo,DING Wan-yu,WANG Hua-lin,ZHANG Shu-wang,ZHANG Can,ZHANG Jun-ji,CHAI Wei-ping(School of Material Science , Engineering,Dalian Jiaotong University,Institute of Optoelectronic Materials & Device,Dalian 116028,China) |
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| Abstract: | Mo films were prepared on the Soda-lime glass(SLG) substrates by direct current pulse magnetron sputtering(DC-PMS).The effects of argon pressure on the microstructure,optical and electrical properties of Mo films have been characterized by Stylus Profiler,X-Ray Diffraction,Four-probe Resistivity Meter and UV-VIS Spectrophotometer respectively.The results show that films sputtered at low argon pressure had greater grain size,good crystallization and optical and electrical properties.The film deposited at 0.4... |
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| Keywords: | Mo films direct current pulse magnetron sputtering grain size optical and electrical properties |
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