Periodically doped MOSFET structure |
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| Authors: | V. Ya. Uritsky A. Yu. Savenko |
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| Affiliation: | (1) AO Svetlana, St. Petersburg, Russia;(2) St. Petersburg State University of Electrical Engineering, St. Petersburg, Russia |
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| Abstract: | ![]()
A novel SOI MOSFET structure is presented that is designed to be operated at 4–600 K and is expected to provide an improvement in performance and reliability. It essentially employs high doping of peripheral source/drain regions and longitudinally periodic doping of the gates and channel. |
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