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Electric-field profile and current control of a long epitaxial GaAs n layer |
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| Authors: | Swartz G.A. Gonzalez A. Dreeben A. |
| Affiliation: | RCA Laboratories, Princeton, USA; |
| Abstract: | Control of the cathode current is used to achieve an electric-field bias above the negative-resistance threshold field on an extended length of GaAs epitaxial layer grown on a semi-insulating substrate. The cathode current is controlled with a Schottky-barrier contact strip parallel to the cathode. |
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