| 软抛光垫条件下非晶态Ge2Sb2Te5的化学机械抛光 |
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| 引用本文： | 何敖东,刘波,宋志棠,吕业刚,李俊焘,刘卫丽,封松林,吴关平.软抛光垫条件下非晶态Ge2Sb2Te5的化学机械抛光[J].半导体学报,2013,34(7):076002-5. |
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| 作者姓名： | 何敖东 刘波 宋志棠 吕业刚 李俊焘 刘卫丽 封松林 吴关平 |
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| 作者单位： | Shanghai Key Laboratory of Nanofabrication Technology for Memory,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;University of Chinese Academy of Sciences;Semiconductor Manufacturing International Corporation |
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| 基金项目： | 国家基础研究重大项目基金;国家自然科学基金项目（面上项目，重点项目，重大项目）； |
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| 摘 要： | Chemical mechanical planarization（CMP） of amorphous Ge2Sb2Te5（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST increases with an increase of runs number for both pads.However,it achieves the higher RR and better surface quality of a-GST for an AT pad.The in-situ sheet resistance（Rs） measure shows the higher Rs of a-GST polishing can be gained after CMP using both pads and the high Rs is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads,the surface morphology and characteristics of both new and used pads are analyzed,it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad,and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST,which results in the high RR of a-GST due to enhanced chemical reaction.
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| 关 键 词： | porosity soft pad chemical mechanical planarization Ge2Sb2Te5 |
Chemical mechanical planarization of amorphous Ge2Sb2Te5 with a soft pad |
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| He Aodong,Liu Bo,Song Zhitang,Lu|¨ Yegang Li Juntao,Liu Weili,Feng Songlin,and Wu Guanping.Chemical mechanical planarization of amorphous Ge2Sb2Te5 with a soft pad[J].Chinese Journal of Semiconductors,2013,34(7):076002-5. |
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| Authors: | He Aodong Liu Bo Song Zhitang Lu|¨ Yegang Li Juntao Liu Weili Feng Songlin and Wu Guanping |
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| Affiliation: | Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100049, China;Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100049, China;Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100049, China;Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Semiconductor Manufacturing International Corporation, Shanghai 201203, China |
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| Abstract: | Chemical mechanical planarization (CMP) of amorphous Ge2Sb2Te5 (a-GST) is investigated using two typical soft pads (politex REG and AT) in acidic slurry. After CMP, it is found that the removal rate (RR) of a-GST increases with an increase of runs number for both pads. However, it achieves the higher RR and better surface quality of a-GST for an AT pad. The in-situ sheet resistance (Rs) measure shows the higher Rs of a-GST polishing can be gained after CMP using both pads and the high Rs is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads, the surface morphology and characteristics of both new and used pads are analyzed, it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad, and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST, which results in the high RR of a-GST due to enhanced chemical reaction. |
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| Keywords: | porosity soft pad chemical mechanical planarization Ge2Sb2Te5 |
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