Electric and dielectric properties of solution-gas interface-grown PbS films |
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| Authors: | P S Nikam K A Pathan |
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| Affiliation: | (1) PG Department of Physical Chemistry, MSG College, 423 105 Malegaon Camp, India;(2) Department of Physics, MSG College, 423 105 Malegaon Camp, India |
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| Abstract: | Dielectric properties andI–V characteristics of solution-gas interface-formed PbS thin-film capacitors (Al/PbS/Al) of various thicknesses have been studied
in the frequency range 10-106 Hz at various temperatures (300–443 K). Current-voltage (I–V) characteristics show space-charge-limited conduction. Dielectric constant (ε) increases with increasing film thickness and temperature and decreases with increase of frequency. The loss factor (tanδ) peaks observed in tanδ vs frequency and tanδ vs temperature reveal relaxation effect from dipolar orientation. These maxima shift to higher-temperature region with increasing
frequency. The large increase in capacitance (C) and dielectric constant (ε) towards low-frequency (f) region indicates the possibility of an interfacial polarization mechanism in this region. |
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| Keywords: | I– V characteristics space-charge-limited current capacitance loss factor relaxation effect dipolar orientation interfacial polarization |
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