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非对称InGaN多量子阱发光二极管的发光分布和空穴输运
引用本文:姬小利,杨富华,王军喜,段瑞飞,丁凯,曾一平,王国宏,李晋闽. 非对称InGaN多量子阱发光二极管的发光分布和空穴输运[J]. 半导体学报, 2010, 31(9): 094009-4
作者姓名:姬小利  杨富华  王军喜  段瑞飞  丁凯  曾一平  王国宏  李晋闽
基金项目:supported by the National High Technology Research and Development Program of China(No.2006AA03A122); the Knowledge Innovation Program of the Chinese Academy of Sciences(No.ISCAS2009T02)
摘    要:为研究多量子阱中的发光分布和空穴输运,制备了非对称InGaN/GaN 多量子阱(MQW)发光二极管。在电注入下,具有wNQW有源区结构(靠近p的第一个阱QW1比其他QWs较宽)的样品只有一个来自QW1的发光峰,而具有nWQW有源区结构的样品具有一个短波长发光峰和一个长波长发光峰,分别来自QW1和后面的QWs。增加QW1和后面QWs之间的势垒厚度,来自后面QWs的长波长发光峰减弱,总的发光强度也随之减弱。结论是具有nWQW和薄势垒的非对称耦合MQW结构可以改善空穴输运,从而增强后面QW的发光,提高LED内量子效率。

关 键 词:发光二极管  多重量子井  空穴传输  不对称  光分布  氮化铟镓  InGaN  量子阱结构

Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes
Ji Xiaoli,Yang Fuhu,Wang Junxi,Duan Ruifei,Ding Kai,Zeng Yiping,Wang Guohong and Li Jinmin. Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes[J]. Chinese Journal of Semiconductors, 2010, 31(9): 094009-4
Authors:Ji Xiaoli  Yang Fuhu  Wang Junxi  Duan Ruifei  Ding Kai  Zeng Yiping  Wang Guohong  Li Jinmin
Affiliation:Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:Asymmetric InGaN/GaN multiple-quantum well (MQW) light-emitting diodes were fabricated to expose the luminescence distribution and explore the hole transport. Under electrical injection, the sample with a wNQW active region in which the first QW nearest the p-side (QW1) is wider than the subsequent QWs shows a single long-wavelength light-emission peak arising from QW1. The inverse nWQW sample with a narrow QW1 shows one short-wavelength peak and one long-wavelength peak emitted separately from QW1 and the subsequent QWs. Increasing the barrier thickness between QW1 and the second QW (QWB1) in the nWQW structure, the long-wavelength peak is suppressed and the total light-emission intensity decreases. It was concluded that the nWQW and thin-QWB1 structure can improve the hole transport, and hence enhance the light-emission from the subsequent QWs and increase the internal quantum efficiency.
Keywords:InGaN  asymmetric coupled multi-quantum-well  light-emitting diodes  luminescence distribution   hole transport
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