Solid-phase epitaxy of amorphous silicon films by in situ postannealing using RPCVD |
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| Authors: | Oliver Skibitzki Yuji Yamamoto Markus Andreas Schubert Günter Weidner Bernd Tillack |
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| Affiliation: | a State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China |
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| Abstract: | A temperature model of the phase change memory (PCM) cell having Ge2Sb2Te5 (GST) layer has been proposed and demonstrated based on a thermal physical model and electrical characteristics. Calculating the radius of PCM cell with different reset voltage pulse based on the voltage-current curves by the temperature equation, the crystalline fraction can be got. It is found that the crystalline fraction and temperature of active region increase with the reset voltage pulse increasing. The experimental results are consistent with the simulation results. |
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| Keywords: | PCM Temperature GST |
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