| GaN和Al_xGa_(1-x)N薄膜材料研究进展 |
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| 引用本文： | 陈伟华,叶志镇.GaN和Al_xGa_(1-x)N薄膜材料研究进展[J].材料科学与工程学报,1997(1). |
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| 作者姓名： | 陈伟华 叶志镇 |
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| 作者单位： | 浙江大学硅材料国家重点实验室 |
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| 摘 要： | ＧａＮ及ＡｌｘＧａ１－ｘＮ是发兰光的关键材料，是目前光电子材料中最引人注目、必须攻克的课题。本文综述了ＧａＮ及ＡｌｘＧａ１－ｘＮ材料的研究现状，重点介绍了ＧａＮ及ＡｌｘＧａ１－ｘＮ材料近年来在性能评价、生长技术和应用开发方面的进展
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| 关 键 词： | GaN Al_xGa_（1－x）N 薄膜 进展 |
Recent Advances in GaN and Al xGa 1-x N Films |
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| Chen Weihua,Ye Zhizhen State Key Lab of Silicon Material,Zhejiang Unversity,Hangzhou.Recent Advances in GaN and Al xGa 1-x N Films[J].Journal of Materials Science and Engineering,1997(1). |
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| Authors: | Chen Weihua Ye Zhizhen State Key Lab of Silicon Material Zhejiang Unversity Hangzhou |
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| Affiliation: | Chen Weihua,Ye Zhizhen State Key Lab of Silicon Material,Zhejiang Unversity,Hangzhou,310027 |
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| Abstract: | GaN and Al xGa 1-x N are important photoelectronic materials operating in the blue light range. In this paper, recent advances in GaN and Al xGa 1-x N are reviewed. Attention is paid to characterizations crystal growth techniques and applications of GaN and Al xGa 1-x N . |
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| Keywords: | GaN \ Al xGa 1-x N \ Films\ Advances |
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