1.06μm注入锁定增益开关半导体激光器特性分析与功率放大研究

报道了1.06 m增益开关半导体激光器的详细特性分析和功率放大研究。用高频正弦信号调制中心波长1.06 m的F-P腔半导体激光器得到脉宽约为100 ps、平均功率约为20 mW,重频从500 MHz到2 GHz连续可调的稳定短脉冲激光输出。采用注入锁定改善增益开关半导体激光器的输出特性。研究和分析了调制信号的频率、功率和偏置电流的大小以及注入锁定的功率、温度对激光器输出特性的影响。将该激光器作为种子,用108 W的抽运光进行两级全光纤功率放大得到了82 W的高功率输出,光光转换效率达到76%。

Characteristics analysis and power amplification of 1.06μm injection-locked gain-switching semiconductor laser

Detailed characteristics analysis and power amplification of gain switched Febry-Prot cavity semiconductor laser at 1.06 m were reported. The gain switched laser diode, which is modulated by high frequency sinusoid electrical signal, can generate stable pulse laser trains with pulse width around 100 ps, average power around 20 mW and repetition rate adjustable from 500 MHz to 2 GHz, while injection locking is employed effectively in improving the spectral performance of output pulse by suppressing the extra longitude modes. Besides, the effects of the variations of modulation frequency, modulation power, bias current magnitude, injection power and working temperature on the output performance of the laser diode were experimentally demonstrated in detail. Furthermore, the injection locked gain switching laser diode was amplified in power with a two-stage all fiber amplifier chain as a seed source, obtaining an output power of 82 W with a pump light of 108 W and light-to-light conversion rate of 76% while retaining good power to power linearity.