| 基于NAND Flash的海量存储器的设计 |
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| 引用本文： | 舒文丽,吴云峰,孙长胜,吴华君,唐斌.基于NAND Flash的海量存储器的设计[J].电子器件,2012,35(1):107-110. |
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| 作者姓名： | 舒文丽 吴云峰 孙长胜 吴华君 唐斌 |
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| 作者单位： | 电子科技大学光电信息学院 |
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| 基金项目： | 四川省应用基础研究项目(2009JY0054);2010年度“富通”翱翔计划项目(FTAX201007) |
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| 摘 要： | 针对存储系统中对存储容量和存储带宽的要求不断提高,设计了一款高性能的超大容量数据存储器。该存储器采用NAND Flash作为存储介质,单板载有144片芯片,分为3组,每组48片,降低了单片的存储速度,实现了576 Gbyte的海量存储。设计采用FPGA进行多片NAND Flash芯片并行读写来提高读写带宽,使得大容量高带宽的存储器得以实现。针对NAND Flash存在坏块的缺点,提出了相应的管理方法,保证了数据的可靠性。
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| 关 键 词： | NAND Flash 海量存储 并行操作 坏块管理 ECC校验 |
Design of Huge Capacity Memory Based on NAND Flash |
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| SHU Wenli,WU Yunfeng,SUN Changsheng,WU Huajun,TANG Bin.Design of Huge Capacity Memory Based on NAND Flash[J].Journal of Electron Devices,2012,35(1):107-110. |
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| Authors: | SHU Wenli WU Yunfeng SUN Changsheng WU Huajun TANG Bin |
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| Affiliation: | (School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610051,China) |
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| Abstract: | In order to comply with the requirements of the memory capacity and bandwidth in storage system,a high capacity memory is designed.This memory uses NAND Flash as the storage medium and a single board has 144 pieces of NAND Flash,dividing into three groups with each group having 48 chips.This can reduce the speed of monolithic memory and achieve a huge capacity of 576 Gbyte.It also employs FPGA to expand the read & write bandwidth by parallel operations on multiple pieces of Flash.Aiming at the shortcoming of bad block in NAND Flash,a management method is proposed to endure the reliability of the data. |
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| Keywords: | NAND Flash huge capacity storage parallel operation bad block management ECC checking |
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