| 氨化Ga_2O_3/Mg薄膜制备簇状GaN纳米线 |
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| 引用本文： | 孙莉莉,薛成山,艾玉杰,庄惠照,王福学.氨化Ga_2O_3/Mg薄膜制备簇状GaN纳米线[J].固体电子学研究与进展,2008,28(2):190-192. |
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| 作者姓名： | 孙莉莉 薛成山 艾玉杰 庄惠照 王福学 |
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| 作者单位： | 山东师范大学半导体研究所,济南,250014 |
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| 摘 要： | 通过在1050°C时氨化Ga2O3/Mg薄膜制备出簇状GaN纳米线。用X射线衍射(XRD),傅里叶红外吸收光谱(FTIR)扫描电子显微镜(SEM)和高分辨电子显微镜(HRTEM)对样品进行测试分析。结果表明,GaN纳米线为六万纤锌矿结构单晶相并且成族生长,直径在200～500nm米左右,其长度可达5～10μm。几乎所有纳米线的直径均有逐渐缩小的趋势。对Mg膜的作用进行了初步的分析。
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| 关 键 词： | 氮化镓 磁控溅射 纳米线 |
Fabrication of GaN Nanowires in Clusters by Ammoniating Ga_2O_3/Mg Films |
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| SUN Lili,XUE Chengshan,AI Yujie,ZHUANG Huizhao,WANG Fuxue.Fabrication of GaN Nanowires in Clusters by Ammoniating Ga_2O_3/Mg Films[J].Research & Progress of Solid State Electronics,2008,28(2):190-192. |
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| Authors: | SUN Lili XUE Chengshan AI Yujie ZHUANG Huizhao WANG Fuxue |
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| Affiliation: | SUN Lili XUE Chengshan AI Yujie ZHUANG Huizhao WANG Fuxue(Institute of Semiconductor,Sh,ong Normal University,Ji\'nan,250014,CHN) |
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| Abstract: | GaN nanowires in cluster were fabraicated by ammoniating Ga2O3/Mg film at 1 050°C.The GaN nanowires were characterized by X-ray diffraction(XRD),Fourier transform infrared reflection(FTIR) spectroscopy,scanning electron microscope(SEM) and high-resolution transmission electron microscopy(HRTEM).The results indicated that these nanowires were hexagonal GaN single crystals with average diameters about 200～500 nm and length of 5～10 μm.The diameter of nanowires had a tendency to thin.The effect of Mg layer was discussed briefly. |
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| Keywords: | GaN magnetron sputtering nanowire |
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