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Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C4Fs/Ar Dual-Frequency Capacitively Coupled Plasma |
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| Authors: | XU Yijun WU Xuemei YE Chao |
| Affiliation: | [1]Department of Physics, Soochow University, Suzhou 215006, China [2]The Key Laboratory of Thin Films of Jiangsu, Soochow University, Suzhou 215006, China [3]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute ofMicrosystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050,China |
| Abstract: | SiC plasma etching dual-frequency capacitively coupled plasma X-ray photoelectron spectroscopy optical emission spectroscopy |
| Keywords: | SiC plasma etching dual-frequency capacitively coupled plasma X-ray photoelectron spectroscopy optical emission spectroscopy |
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