| 硅化钨/多晶硅复合栅的反应离子刻蚀工艺研究 |
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| 引用本文： | 李祥,华亚平.硅化钨/多晶硅复合栅的反应离子刻蚀工艺研究[J].微电子学,1991(5). |
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| 作者姓名： | 李祥 华亚平 |
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| 作者单位： | 华晶电子集团公司中央研究所
(李祥)，华晶电子集团公司中央研究所(华亚平) |
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| 摘 要： | 本文介绍用SF_6+O_2,SF_6+Cl_2作腐蚀剂,反应离子刻蚀(RIE)的硅化钨/多晶硅复合栅工艺。着重研究了各工艺参数的改变对硅化钨和多晶硅刻蚀结果的影响,和刻蚀复合栅结构的最佳工艺条件。
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| 关 键 词： | 反应离子刻蚀 复合栅 MOS IC |
An Investigation Into Reactive Ion Etching of Tungsten Silicide And Polysilicon Composite Structures |
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| Li Xiang and Hua Yaping.An Investigation Into Reactive Ion Etching of Tungsten Silicide And Polysilicon Composite Structures[J].Microelectronics,1991(5). |
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| Authors: | Li Xiang and Hua Yaping |
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| Abstract: | Reactive ion etching of WSi2,4/polysilicon composite gates, with SF6+ C12 and SFe+O2 as etchant, is described in the paper. The effects of the variation of process parameters on the etching of WSi2,4 and polysilicon are investigated to determine the optimal process conditions for etching of the composite structure. |
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| Keywords: | Reactive ion etching Composite gate MOS IC |
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