Hillock and Whisker Growth on Sn and SnCu Electrodeposits on a Substrate Not Forming Interfacial Intermetallic Compounds |
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Authors: | ME Williams K-W Moon WJ Boettinger D Josell AD Deal |
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Affiliation: | (1) Metallurgy Division, NIST, Gaithersburg, MD 20899, USA;(2) Department of Materials Science & Engineering, Lehigh University, Bethlehem, PA 18015, USA |
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Abstract: | Intermetallic compound (IMC) formation at the interface between the tin (Sn) plating and the copper (Cu) substrate of electronic
components has been thought to produce compressive stress in Sn electrodeposits and cause the growth of Sn whiskers. To determine
if interfacial IMC is a requirement for whisker growth, bright Sn and a Sn-Cu alloy were electroplated on a tungsten (W) substrate
that does not form interfacial IMC with the Sn or Cu. At room temperature, conical Sn hillocks grew on the pure Sn deposits
and Sn whiskers grew from the Sn-Cu alloy electrodeposits. These results demonstrate that interfacial IMC is not required
for initial whisker growth. |
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Keywords: | Interfacial intermetallic compound (IMC) tin whiskers focused ion beam (FIB) |
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