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Catalytic hydrogenation for improvement of GaAs/Ge solar cell efficiency |
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| Authors: | R. Tyagi M. Bal M. Singh Satish Mohan T. Haldar A. Naik Premveer Singh M. Husain S. K. Agarwal |
| Affiliation: | a Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110054, India;b Department of Applied Physics, Delhi College of Engineering, Bawana Road, Delhi 110042, India;c Department of Physics, Jamia Milia Islamia, New Delhi, India |
| Abstract: | Hydrogen passivation on MOCVD grown p-GaAs epilayers on Ge substrate have been studied by plasma and catalytic hydrogenation and the results were compared. The conversion efficiency of the GaAs/Ge solar cells was found to increase by 10% after catalytic hydrogenation at AM1.5. This increase in efficiency is probably due to passivation of surface dangling bonds. |
| Keywords: | GaAs/Ge solar cell Catalytic hydrogenation Efficiency MOCVD Plasma |
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