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Electron tomography of III‐V quantum dots using dark field 002 imaging conditions
Authors:R BEANLAND  AM SÁNCHEZ  JC HERNANDEZ‐GARRIDO  D WOLF  PA MIDGLEY
Affiliation:1. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, U.K.;2. Present address: Department of Physics, University of Warwick, Coventry CV4 7AL, U.K.;3. Departmento de Ciencias Materiales e I.M. y Q.I., Campus Universitario de Puerto Real, Puerto Real, 11510 Cádiz, Spain;4. Institut für Strukturphysik, Technische Universit?t Dresden, Zum Triebenberg 50, 01328 Dresden, Germany
Abstract:We present an evaluation of electron tomography of buried InAs quantum dots using dark field 002 imaging conditions. The compositional sensitivity of this imaging condition gives strong contrast among III‐V materials of differing compositions and, in principle, should allow an accurate 3D model of the buried structures to be produced. The large extinction distance allows specimens several hundred nanometres in thickness to be examined and reduces the effect of strain contrast in the images, with the advantage that it can be performed using conventional transmission electron microscopy techniques. A two‐beam condition must be maintained for all images, and the presence of other strong diffraction effects at certain specimen orientation results reduces the number of orientations available for tomography by approximately 10%. The data presented here are limited due to a lack of angular range in the data set but we find that an acceptable 3D model of a buried quantum dot may be produced by imposing cylindrical symmetry on the data set.
Keywords:InAs/GaAs  quantum dot  tomography  TEM  III‐V semiconductors
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