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The robustness of series-connected high power IGBT modules
Authors:C. Abbate   G. Busatto   L. Fratelli   F. Iannuzzo   B. Cascone  R. Manzo
Affiliation:aDepartment of Automation, Electromagnetism, Information Engineering and Industrial Mathematics, University of Cassino, Via G. Di Biasio, 43, 03043 Cassino, FR, Italy;bAnsaldoBreda Spa, Via Argine, 425, 80147 Napoli, Italy
Abstract:The behaviour in terms of robustness of series-connected high power IGBT modules is presented, arranged in a topology which ensures voltage balance on IGBT’s and diodes by means of a simple auxiliary circuit applied directly on the high power devices, which are used in hard switching mode. Analyses in terms of IGBT and diode SOA (safe operating area), collector to emitter voltage gradient and short circuit condition are reported as well as an extended experimental characterisation. Both analyses confirm superior switching rating and system reliability, by using two series-connected IGBT in substitution of a single module, same current and double voltage rated. Moreover, thanks the auxiliary circuit presence, the robustness of total system is maintained also in extreme operating conditions.
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