Influence of A-site Gd doping on the microstructure and dielectric properties of Ba(Zr0.1Ti0.9)O3 ceramics

Pure and Gd-doped barium zirconate titanate (BaZr_0.1Ti_0.9O₃, BZT) ceramics were prepared by solid state reaction method. Phase analysis showed the formation of the pyrochlore phase (Gd₂Ti₂O₇) at about 5 mol% Gd doping in BZT. The microstructural investigation on the sintered ceramics showed that Gd doping significantly reduced the grain size of pure BZT ceramics, from about 100 μm to 2-5 μm. Change in the Gd concentration had minor influence on the grain size and on morphology. An increase in the Gd content decreased the Curie temperature (T_C) of the BZT ceramics. The maximum dielectric constant at T_C was observed for 2 mol% Gd and with further increase in Gd content the dielectric constant at T_C decreased. The dielectric constant was significantly improved compared to that of pure BZT ceramic. Tunable dielectric materials with good dielectric properties can be prepared by doping BZT with Gd.