|
|||||
|
|
| 一种高精度带隙基准电压源设计 | |
| 引用本文： | 刘军儒,牛萍娟,高铁成,王亦伟. 一种高精度带隙基准电压源设计[J]. 现代电子技术, 2010, 33(2): 1-3 |
| 作者姓名： | 刘军儒 牛萍娟 高铁成 王亦伟 |
| 作者单位： | 天津工业大学,信息与通信工程学院,天津,300160 |
| 基金项目： | 国家"863"计划资助项目，天津市科技支撑计划资助项目 |
| 摘 要： | 提出一种采用0．35umCMOS工艺制作的带隙基准电压源电路，该电路具有高电源抑制比和低的温度系数。整体电路使用TSMC0．35umCMOS工艺，采用HSpice进行仿真。仿真结果表明，在-25～＋125℃温度范围内温度系数为6．45ppm／C，电源抑制比达到-101dB，电源电压在2．5～4．5V之间，输出电压Vrel的摆动为0．1mV，功耗为0．815mW．是一种有效的基准电压实现方法。 |
| 关 键 词： | 带隙基准电压源 电源抑制比 温度系数 HSpice |
Design of High Precision Bandgap Voltage Reference |
|
| LIU Junru,NIU Pingjuan,GAO Tiecheng,WANG Yiwei. Design of High Precision Bandgap Voltage Reference[J]. Modern Electronic Technique, 2010, 33(2): 1-3 | |
| Authors: | LIU Junru NIU Pingjuan GAO Tiecheng WANG Yiwei |
| Affiliation: | LIU Junru,NIU Pingjuan,GAO Tiecheng,WANG Yiwei(College of Information , Communication Engineering,Tianjin Polytechnic University,Tianjin,300160,China) |
| Abstract: | A bandgap voltage reference circuit using 0. 35 um complementary CMOS process is presented. The circuit has high Power Supply Rejection Ratio（PSRR） and low - temperature coefficient. Simulation using HSpice based on the TSMC 0.35 um CMOS process. The results show the temperature coefficient is 6. 45 ppm/C between the temperature range of --25- ＋125℃ and the PSSR is the --101 dB. The bandgap output voltage Vref swing is 0. 1 mV when the supply voltage is 2.5-4.5 V and the power consumption is only 0. 815 mW. Therefore,it is an effective way to implement a bandgap voltage reference. |
| Keywords: | HSpice |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |