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| Implant Compositional Disordering on InGaAs／InP MQW Structures | |
| 引用本文： | ZHAO Jie,LIU Baojun,WANG Yufang,WANG Yuongchen,Thompson D A. Implant Compositional Disordering on InGaAs／InP MQW Structures[J]. 半导体光子学与技术, 1996, 2(1): 42-48 |
| 作者姓名： | ZHAO Jie LIU Baojun WANG Yufang WANG Yuongchen Thompson D A |
| 作者单位： | Tianjin Normal University，Tianjin 300074，CHN |
| 摘 要： | ＩｍｐｌａｎｔＣｏｍｐｏｓｉｔｉｏｎａｌＤｉｓｏｒｄｅｒｉｎｇｏｎＩｎＧａＡｓ／ＩｎＰＭＱＷＳｔｒｕｃｔｕｒｅｓ￥ＺＨＡＯＪｉｅ；ＬＩＵＢａｏｊｕｎ；ＷＡＮＧＹｕｆａｎｇ；ＷＡＮＧＹｕｏｎｇｃｈｅｎ；ＴｈｏｍｐｓｏｎＤＡ（ＴｉａｎｊｉｎＮｏｒｍａｌＵ... |
| 关 键 词： | 量子势阱 Ⅲ－Ⅴ族半导体 离子注入 MBE |
| 收稿时间： | 1995-10-30 |
Implant Compositional Disordering on InGaAs/InP MQW Structures |
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| ZHAO Jie,LIU Baojun,WANG Yufang,WANG Yuongchen,Thompson D A. Implant Compositional Disordering on InGaAs/InP MQW Structures[J]. Semiconductor Photonics and Technology, 1996, 2(1): 42-48 | |
| Authors: | ZHAO Jie LIU Baojun WANG Yufang WANG Yuongchen Thompson D A |
| Abstract: | Some new results of implant disordering on InP based MQW structures by im-planted compositional disordering are presented.The energy shift of PL peak depends on ion species,ion dose,annealing conditions and target temperature,The results indicate that the nonactive ions such as F^+ and Ne^+ are the best candiates for IICD,the ion dose which caused biggest blue shift is around 1×10^14cm^-2for room temperature implantation and 5×10^14cm^-2for an elevated implanted temperature of 200℃ and the optimum annealing condition is approximately 750℃for 30s.AES and TEM characterization suggests that ion bombardment by nonelectrically active ions such as F^+,Ne^+induced same amount of layer interdiffusion which results in the band gap blue shift due to the compositional changes. |
| Keywords: | Quantum Wells Ⅲ-Ⅴ Semiconductors MBE Ion Implantation |
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