Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser |
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| Affiliation: | 1. Department of Electronic Communication and Technology, Shenzhen Institute of Information Technology, 1068 west Nigang road, Shenzhen 518029, People''s Republic of China;2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of science, 865 Changning road, Shanghai 200050, People''s Republic of China;3. College of Physics and engineering, Qufu Normal University, Qufu 273165, People''s Republic of China |
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| Abstract: | We report on the lasing characteristics of InAs/InP(100) quantum dots laser through changing the temperature under continuous-wave mode. Three lasing peaks are simultaneously observed at temperature of 80 K and the lasing order of each peak is unrelated with each other when injection current increases. Laser spectra obtained under fixed current for different temperatures show a drastic influence on their shape. A large spectral broadening is observed at low temperature, while the width of lasing spectra gradually narrows when the operating temperature increased. The lasing process of quantum dot laser is obviously different from that of a reference quantum well laser in the same wavelength region. In addition, very high wavelength stability of 0.088 nm/K in the temperature range of 80–300 K is obtained, which is 6.2 times better than that of reference quantum well laser. |
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