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金属刻蚀后清洗导致AlSiCu互连线空洞问题的研究和对策
引用本文:尤美琳,朱亦鸣.金属刻蚀后清洗导致AlSiCu互连线空洞问题的研究和对策[J].材料科学与工程学报,2012,30(2):176-181.
作者姓名:尤美琳  朱亦鸣
作者单位:1. 上海交通大学微电子学院,上海200240/上海先进半导体制造股份有限公司工艺集成部,上海200233
2. 上海交通大学微电子学院,上海200240/上海理工大学教育部光学仪器与累统工程研究中心,上海200093
基金项目:上海市科委纳米技术专项资助项目,上海市科委浦江人才计划资助项目,上海市教育委员会科研创新资助项目,国家教育部博士点新教师基金资助项目,教育部留学回国科研启动基金
摘    要:集成电路制造中,AlSiCu互连线一般使用干法刻蚀来制造,刻蚀后需经清洗工艺将残留物去除掉。而在清洗时,合金表面会出现空洞。我们在对空洞形成原理分析后发现,AlSiCu合金是由α相铝铜和富含Cu的θ相铝铜合金组成,在清洗过程中会发生电偶腐蚀而腐蚀Al。并且清洗使用的化学试剂由于含有胺根,水解后加剧了对Al的腐蚀。我们通过降低AlSiCu合金溅射时的衬底温度,将AlSiCu合金表面氧化,去离子水清洗时通入CO2这三种方案来防止AlSiCu合金在清洗时被腐蚀,从而提高了产品的成品率。

关 键 词:AlSiCu互连  刻蚀后残留物  清洗  空洞

Study on Interconnected Holes of AlSiCu Induced by Etch Cleaning
YOU Mei-lin,ZHU Yi-ming.Study on Interconnected Holes of AlSiCu Induced by Etch Cleaning[J].Journal of Materials Science and Engineering,2012,30(2):176-181.
Authors:YOU Mei-lin  ZHU Yi-ming
Affiliation:1,3 (1.School of Microelectronics,Shanghai Jiaotong University,Shanghai 200240,China; 2.Process Integration Department,Advanced Semiconductor Manufacturing Corporation Limited,Shanghai 200233,China; 3.Engineering Research Center of Optical Instrument and System,Ministry of Education, University of Shanghai for Science and Technology,Shanghai 200093,China)
Abstract:AlSiCu connecting lines are normally fabricated by dry etching method in modern semiconductor industry.After etching,we need clean the AlSiCu lines.In the cleaning process,small holes are always produced on the surface of metal.We analyzed the principle of the formation of holes and found that AlSiCu alloy consists of α phase AlCu and Cu-rich θ phase AlCu,which can cause galvanic corrosion for Al in the cleaning process.Furthermore,the cleaning solvent contains amine,which increases the corrosion of aluminum.By decreasing the substrate temperature in the process of sputter,oxygenating the surface of AlSiCu and adding CO2 into DI water,eventually,the corrosion on the AlSiCu can be prevented and the yield of final products is improved.
Keywords:AlSiCu interconnect  etch residue  cleaning  holes
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