| Luminescence Properties of Sm^3＋ doped Bi2ZnB2O7 |
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| 引用本文： | 张秋红,王静,张梅,丁唯嘉,苏锵.Luminescence Properties of Sm^3＋ doped Bi2ZnB2O7[J].中国稀土学报(英文版),2006,24(4):392-395. |
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| 作者姓名： | 张秋红 王静 张梅 丁唯嘉 苏锵 |
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| 作者单位： | State Key Laboratory of Optoeletronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275, China |
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| 基金项目： | 国家自然科学基金，广东省自然科学基金 |
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| 摘 要： | The phosphors of （Bi1- x Smx ） 2ZnB2O7 （ x = 0. 01, 0. 03, 0. 05, 0. 07, and 0. 09） were synthesized by conventional solid state reaction. The purity of all samples was checked by X-ray powder diffraction （XRD）. XRD analysis shows that all these compounds are of a single phase of Bi2ZnB2O7, indicating that the Bi^3＋ in Bi2ZnB2O7 can be partly replaced by the Sm^3＋ without the change of crystal structure. The excitation and emission spectra at room temperature show the typical 4f-4f transitions of Sm^3＋ . The dominant excitation line is around 404 nm due to ^6H5/2→^4K11/2 and the emission spectrum consists of a series of lines at 563, 599, 646, and 704 nm due to ^4G5/2→^6H5/2, ^6H7/2, ^6H9/2, and ^6H11/2, respectively. The optimal concentration of Sm^3＋ in Bi2ZnB2O7 is about 3mol% （relative to lmol Bi^3＋ ） and the critical distance Rc was calculated as 2.1 nm. The temperature dependence of the emission intensity of Bi1.94Sm0.06ZnB2O7 was examined in the temperature range between 100 and 450 K. The quenching temperature where the intensity has dropped to half of the initial intensity is 280 K. The lifetime for Sm^3＋ in Bi1.94Sm0.06ZnB2O7 is fitted as a value of 0.29 and 1.03 ms.
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| 关 键 词： | Bi2ZnB2O7 稀土 发光性能 荧光材料 浓缩猝灭 热猝灭 |
| 文章编号： | 1002-0721（2006）04-0392-04 |
| 收稿时间： | 2005-12-21 |
| 修稿时间： | 2006-03-10 |
Luminescence Properties of Sm doped Bi2ZnB2O7 |
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| Qiuhong , Jing Wang, Mei Zhang, Weijia Ding,Qiang Su,.Luminescence Properties of Sm doped Bi2ZnB2O7[J].Journal of Rare Earths,2006,24(4):392-395. |
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| Authors: | Qiuhong Jing Wang Mei Zhang Weijia Ding Qiang Su |
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| Affiliation: | aState Key Laboratory of Optoeletronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275, China |
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| Abstract: | The phosphors of (Bi1-xSmx)2ZnB2O7 (x=0.01, 0.03, 0.05, 0.07, and 0.09) were synthesized by conventional solid state reaction. The purity of all samples was checked by X-ray powder diffraction (XRD). XRD analysis shows that all these compounds are of a single phase of Bi2ZnB2O7, indicating that the Bi3 in Bi2ZnB2O7 can be partly replaced by the Sm3 without the change of crystal structure. The excitation and emission spectra at room temperature show the typical 4f-4f transitions of Sm3 . The dominant excitation line is around 404 nm due to 6H5/2→4K11/2 and the emission spectrum consists of a series of lines at 563, 599, 646, and 704 nm due to 4G5/2→6H5/2, 6H7/2, 6H9/2, and 6H11/2, respectively. The optimal concentration of Sm3 in Bi2ZnB2O7 is about 3mol% (relative to 1mol Bi3 ) and the critical distance Rc was calculated as 2.1 nm. The temperature dependence of the emission intensity of Bi1.94Sm0.06ZnB2O7 was examined in the temperature range between 100 and 450 K. The quenching temperature where the intensity has dropped to half of the initial intensity is 280 K. The lifetime for Sm3 in Bi1.94Sm0.06ZnB2O7 is fitted as a value of 0.29 and 1.03 ms. |
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| Keywords: | Bi2ZnB2O7 Sm3 luminescence properties concentration quenching thermal quenching rare earths |
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