甚低频固态发射机功率器件分析

甚低频发射机用来给潜艇发信,功率达数百千瓦至数千千瓦,如今可以采用MOSFET和IGBT等固态器件作为大功率开关放大器,但选择MOSFET还是IGBT,设计人员需要做出选择。分析了这两类器件的开关特性及导通特性,比较了它们的工作特点,介绍了一种典型的大功率开关放大器应用电路,讨论了甚低频发射机在选择大功率放大器器件时应考虑的一些条件,如频率、电压、开关时间等。

Performance Analysis of Power Devices Used for VLF Solid-state Amplifier

To apply high-power solid-state switch amplifier in VLF transmitter,the switch characters and on-state performances of MOSFET and IGBT are analysed,and their working characteristics are compared,then a representative application circuit of high power switch amplifier in VLF is introduced.Here we give a few basic guidelines of choice MOSFET or IGBT are given when we design High-Power VLF solid-state amplifier.It indicates that some parameters should be payed attention to such as frequency,voltage and switch time,and so on.