磁控溅射制备纳米TiO2薄膜导电性的研究

研究了在纳米厚度范围内,TiO₂薄膜的导电性与薄膜厚度和基底材料的关系.利用射频磁控溅射方法,使用高纯Ti(99.99％)靶,通入Ar和O₂的混合气体,制备了TiO₂薄膜,薄膜膜厚15～225nm.在室温下测量了不同厚度TiO₂薄膜的电阻率,发现TiO₂薄膜的导电性,先后在导体、半导体和绝缘体范围变化.这归因于基底材料与TiO₂的功函数不同,导致了界面电子的转移,功函数差决定了电子转移的深度.

Conductivity of Magnetron-sputtered Nanometer TiO2 Thin Films

The conductivity of nanometer TiO₂ thin films was studied. The dependence of the conductivity of TiO₂ thin films on the thickness of the film and the substrate materials were educed. The TiO₂ films were deposited by reactive magnetron sputtering of Ti target in an Ar+O₂ mixture in a conventional sputtering reactor. The thickness of the films varied in the range from 15nm to 225 nm. The electrical resistivity of the films was measured at room temperature in the air. The results show that the conductivity of TiO₂ thin films varies from metal, semiconductor to nonconductor. This is attributed to the transfer of the electrons at the interface between the TiO₂ and substrates, and the difference of work function determines the depth of the transfer of the electrons.