Long-channel field-effect transistor with short-channel transistor properties |
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| Authors: | A. V. Karimov D. M. Yodgorova O. A. Abdulkhaev |
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| Affiliation: | 1. Physical-Technical Institute, Scientific Production Association “Physics-Sun”, Uzbekistan Academy of Sciences, ul. G. Mavlyanov 2b, Tashkent, 100084, Uzbekistan
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| Abstract: | The typical parameters of samples of long-channel field-effect transistors and the results of measurement of their functional characteristics are presented. The possible distributions of the carrier mobility over the channel thickness are considered. The current-voltage characteristics of long-channel field-effect transistors with an arbitrary doping profile and carrier-mobility gradient are theoretically analyzed taking into account carrier velocity saturation. |
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