New 1.5 ?m wavelength GaInAsp/InP distributed feedback laser |
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| Authors: | Itaya Y. Matsuoka T. Nakano Y. Suzuki Y. Kuroiwa K. Ikegami T. |
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| Affiliation: | NTT, Musashino Electrical Communication Laboratory, Musashino, Japan; |
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| Abstract: | ![]()
A new 1.5 ?m-wavelength GalnAsP/InP distributed feedback buried-heterostructure laser was fabricated by a three-step LPE growth process. The second-order corrugation grating was formed on the waveguide layer grown on the active layer. High differential quantum efficiency of 13%/facet was obtained. Single-longitudinal-mode operation in the temperature range from ?20°C to 55°C was obtained. |
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