Q-band high-efficiency monolithic HEMT power prematch structures |
| |
Authors: | Kasody R Wang H Biedenbender M Callejo L Dow GS Allen BR |
| |
Affiliation: | Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA; |
| |
Abstract: | Monolithic Q-band high-efficiency prematch structures using 0.15 μm double-heterostructure pseudomorphic AlGaAs-InGaAs-GaAs HEMTs have been designed, fabricated and evaluated. The structures include a 400 μm and an 800 μm gate-width unit, demonstrating power-added efficiency of 41.6% and 37%, respectively, which represents state-of-the-art efficiency performance at this frequency. These building-blocks can be used easily to construct high-power, high-efficiency amplifiers. The circuit design, output power and efficiency performance of the prematch structures are also presented |
| |
Keywords: | |
|
|